| ‘‘‘‘‘‘‘‘‘‘‘‘‘‘‘‘‘‘‘‘ KAWASAKI STEEL TECHNICAL REPORT No.30 ( August 1994 ) Special Issue on LSI ‘‘‘‘‘‘‘‘‘‘‘‘‘‘‘‘‘‘‘‘ |
| Improving Gate Oxide Integrity in p+pMOS Devices by Using Large Grain Polysilicon Gate Munetaka Koda, Junichi Kawaguchi, Yoshikatsu Shida |
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Synopsis : The effect of polysilicon grain size on gate oxide integrity in BF2 implanted polysilicon gate pMOS devices was investigated by measuring the electrical characteristics of a MOS capacitor. Gate oxide integrity deteriorated when conventional polysilicon with a small (0.05Κm) grain size was used. The use of large (1.0Κm) grain polysilicon was effective in solving this problem of gate oxide quality. Additionally, the use of large grain polysilicon greatly reduced boron diffusion through the gate oxide into the channel region and decreases in gate oxide capacitance. |
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