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KAWASAKI STEEL TECHNICAL REPORT
No.30 ( August 1994 )
Special Issue on LSI
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High Quality Dielectric Film for 0.35-ƒΚm Design Rule Application by O3-TEOS-CVD Using Ethanol Pre-treatment

Nobuyoshi Sato, Tadashi Nakano, Tomohiro Ohta
Synopsis :
A new surface treatment involving the spin-coating of ethanol on a substrate prior to O3-tetraethylorthosilicate (TEOS) deposition by atmospheric pressure chemical vapor deposition (APCVD) was found to be very effective of improving the gap-filling properties and film quality. The deposited film has a flow-like surface shape, and can be used to fill trenches of 0.3ƒΚm width and 1.2ƒΚm depth, which could not be filled by conventional O3-TEOS APCVD. The effects of surface treating by some other organic solvents are also reported and a possible mechanism is presented.
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