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KAWASAKI STEEL TECHNICAL REPORT
No.30 ( August 1994 )
Special Issue on LSI
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Improvement of Electromigration Resistance of AlCu/TiN Lines by Controlling Aluminum Microstructure

Takenao Nemoto, Hiroshi Horikoshi, Takeshi Nogami
Synopsis :
Two techniques for improving electromigration (EM) resistance of AlCu/TiN lines were developed by controlling the microstructure of aluminum alloys. One is control of Cu atom distribution in AlCu films by aging at 250Ž for 10 h after the wafer process. Cu atom segregation to grain boundaries after aging was observed indicating importance of segregated Cu for EM resistance. The other is control of crystalline orientation of Al in AlCu/TiN lines. Deterioration of crystalline orientation was found in metallization process to form tungsten-plug contact/via. Removal of sulfur/fluorine atoms from the TiN surface on which AlCu films are to be deposited privented the deterioration.
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