| ‘‘‘‘‘‘‘‘‘‘‘‘‘‘‘‘‘‘‘‘ KAWASAKI STEEL TECHNICAL REPORT No.23 ( October 1990 ) R&D of High-Technology Research Laboratories, Commemorating the 20th Anniversary of the Technical Research Division ‘‘‘‘‘‘‘‘‘‘‘‘‘‘‘‘‘‘‘‘ |
| Development of AlN Substrate with High Thermal
Conductivity Makoto Yokoi, Takao Kanemaru, Masato Kumagai, Tadashi Nakano, Toshihiko Funahashi, Yutaka Yoshii |
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Synopsis : Aluminum nitride (AlN), an attractive candidate for the high performance substrate of the next generation, has been developed, and metallization techniques have also been advanced. High thermal conductivity AlN substrate with more than 180 W/m₯K has successfully been obtained by using high purity, especially low oxygen content AlN powder, and by decreasing impurities, attaining grain growth and eliminating pores completely in the sintered body. Development of an excellent organic binder, tape casting, binder burn-out and the sintering process has resulted in the highly efficient manufacturer of the AlN substrate. AlN is a suitable substrate for mounting highly integrated, high power and large-sized semiconductor devices. With the above mentioned development of the manufacturing process and metallization techniques, large-scale practical applications of the AlN substrate have been expected. |
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